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ISP521-1X, ISP521-2X, ISP521-4X ISP521-1, ISP521-2, ISP521-4
HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P96102022 Fimko - Registration No. 192313-01..25 Semko - Reference No. 9639052 01 Demko - Reference No. 305969
ISP521-1X ISP521-1
2.54 7.0 6.0 1 2
Dimensions in mm
4 3
1.2 5.08 4.08 7.62 4.0 3.0 0.5 3.0 13 Max 0.26
DESCRIPTION 2.54 The ISP521-1 , ISP521-2 , ISP521-4 series of 1 optically coupled isolators consist of infrared 2 light emitting diodes and NPN silicon photo 7.0 3 transistors in space efficient dual in line plastic 6.0 4 packages. 1.2 FEATURES 10.16 l Options :7.62 9.16 10mm lead spread - add G after part no. 4.0 3.0 Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. 0.5 l High Current Transfer Ratio ( 50% min) 3.0 0.26 l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) 3.35 l High BVCEO ( 55Vmin ) 0.5 1 l All electrical parameters 100% tested l Custom electrical selections available ISP521-4X 2 APPLICATIONS ISP521-4 3 l Computer terminals 4 2.54 l Industrial systems controllers l Measuring instruments 5 l Signal transmission between systems of 6 7.0 different potentials and impedances 6.0
OPTION SM SURFACE MOUNT OPTION G 7.62 1.2 20.32 19.32 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 3.0 0.5 3.35 4.0 3.0 0.5 0.26 7 8
ISP521-2X ISP521-2
0.5
3.35
8 7 6 5
13 Max
16 15 14 13 12 11 10 9
7.62 13 Max
ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com
DB92252m-AAS/A2
ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 125C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 5V 70mW
OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION Total Power Dissipation
(derate linearly 2.67mW/C above 25C)
55V 6V 150mW
200mW
ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) MIN TYP MAX UNITS 1.0 5 1.15 1.3 10 V V A V V nA TEST CONDITION IF = 10mA IR = 10A VR = 5V IC = 0.5mA IE = 100A VCE = 24V 5mA IF , 5V VCE 1mA IF , 0.4V VCE 8mA IF , 2.4mA IC 1mA IF , 0.2mA IC See note 1 See note 1 VIO = 500V (note 1) VCC = 10V , IC = 2mA, RL = 100
Output
Collector-emitter Breakdown (BVCEO) 55 ( Note 2 ) Emitter-collector Breakdown (BVECO) 6 Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note 2) ISP521-1, ISP521-2, ISP521-4 CTR selection available BL GB GB 50 200 100 30
100
Coupled
600 600 600
% % % % V V VRMS VPK s s s s
Collector-emitter Saturation VoltageVCE (SAT) -GB Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Rise Time tr Fall Time tf Turn-on Time ton Turn-off Time toff
0.4 0.4
2 3 3 3
Note 1 Note 2
Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.
7/12/00
DB92252m-AAS/A2
Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation P C (mW) 25 Collector current I C (mA) 150 20 15 10 5 0 -30 0 25 50 75 100 125 0
Collector Current vs. Low Collector-emitter Voltage TA = 25C 50 40 30 20 10 5 IF = 2mA
100
50
0 Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature 60
0.2
0.4
0.6
0.8
1.0
Collector-emitter voltage VCE ( V ) Collector Current vs. Collector-emitter Voltage 50 50 30 Collector current I C (mA) 40 30 20 10 0 20 15 10 TA = 25C
50 Forward current I F (mA) 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.28 IF = 5mA IC = 1mA Current transfer ratio CTR (%) 0.24 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( C )
7/12/00
IF = 5mA
0
2
4
6
8
10
Collector-emitter voltage VCE ( V ) Current Transfer Ratio vs. Forward Current 320 280 240 200 160 120 80 40 0 1 2 5 10 20 50 Forward current IF (mA)
DB92252m-AAS/A2
Collector-emitter saturation voltage V
CE(SAT)
(V)
VCE = 5V TA = 25C

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